| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,015 pcs
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5015 pcs | On Request | 1 | On Request | On Request | 1222+ | On Request | On Request | |
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911 pcs
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911 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Toshiba TK30A06J3A is an N-Channel MOSFET belonging to the U-MOS III technology family. It is designed for applications such as switching regulators. Key electrical characteristics include a low drain-source ON-resistance of 19 mΩ (typical) and a high forward transfer admittance of 34 S (typical). The device features a low leakage current of 10 µA (maximum) at 60V drain-source voltage.
The MOSFET operates in enhancement mode with a threshold voltage ranging from 1.3V to 2.5V. Absolute maximum ratings include a drain-to-source voltage of 60V, gate-to-source voltage of ±20V, and a continuous drain current of 30A. The channel dissipation is rated at 25W, with a maximum channel temperature of 150°C and a storage temperature range of -55°C to +150°C.
Packaged in a TO-220 case, this MOSFET is designed for through-hole mounting. Its robust specifications make it suitable for various power management circuits requiring efficient switching.
The maximum drain-source voltage (VDS) is 60V.
The maximum drain current (ID) is 30A.
The typical drain-source on-resistance (RDS(on)) is 19mΩ at VGS=10V and ID=15A.
The maximum gate-source voltage (VGS) is ±20V.
The maximum channel temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The part is available in a TO-220 through-hole package.
The threshold voltage (Vth) ranges from 1.3V to 2.5V at VDS=10V and ID=1mA.
