| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,484 pcs
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6484 pcs | On Request | 1 | On Request | On Request | 93+ | On Request | On Request |
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The BD243B from STMicroelectronics is a silicon epitaxial-base NPN transistor housed in a standard Jedec TO-220 plastic package. This component is engineered for medium power linear and switching applications. It offers a maximum collector current of 6A and a collector-emitter voltage rating of up to 100V (for the BD243C variant, BD243B is 80V).
Key electrical characteristics include a maximum collector-emitter saturation voltage of 1.5V at 6A and 1A base current, and a DC current gain (hFE) of at least 30 at 0.3A and 4V. The transistor has a maximum power dissipation of 65W at 25°C case temperature and a wide operating junction temperature range from -65°C to 150°C.
Its complementary PNP type is the BD244B/BD244C. The TO-220 package is suitable for through-hole mounting, making it a versatile choice for various electronic designs requiring robust power handling capabilities.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BD243B transistor is 6A.
The maximum collector-emitter voltage for the BD243B transistor is 80V, with the BD243C variant rated at 100V.
The BD243B transistor uses the TO-220-3 package.
The maximum power dissipation for the BD243B transistor is 65W at 25°C.
The operating temperature range for the BD243B transistor is -65°C to 150°C.
