| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,363 pcs
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2363 pcs | On Request | 1 | On Request | On Request | 0927+ | On Request | 2026-06-03 08:15:20 |
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The Toshiba TK12J60U is a Silicon N-Channel MOS Type (DTMOSᶘ) Field Effect Transistor. It is specifically designed for switching regulator applications, benefiting from a low drain-source ON resistance of 0.36Ω (typ.) and a high forward transfer admittance of 7.0 S (typ.).
Key electrical characteristics include a drain-source voltage of 600V, a gate-source voltage of ±30V, and a continuous drain current of 12A. The device also features a low leakage current of 100µA at 600V. Its enhancement-mode operation is indicated by a gate threshold voltage between 3.0V and 5.0V.
With a maximum power dissipation of 144W at 25°C case temperature, the TK12J60U is built for demanding applications. It has a channel temperature rating of 150°C and a storage temperature range of -55°C to 150°C. The thermal resistance from channel to case is 0.868°C/W, and from channel to ambient is 50°C/W.
Packaged for through-hole mounting, this electrostatic sensitive device requires careful handling. Its specifications make it suitable for power supply circuits and other high-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The typical drain-source ON resistance is 0.36Ω at 6A.
The gate threshold voltage is between 3.0V and 5.0V.
The maximum continuous drain current is 12A.
The TK12J60U is a through-hole mounted component.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
