| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,815 pcs
|
7815 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | 2026-06-03 08:15:20 | |
|
1,170 pcs
|
1170 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Toshiba TK12A60U is a high-performance N-Channel Power MOSFET. It is rated for a maximum Drain-Source Voltage of 600V and a continuous Drain Current of 12A.
This MOSFET features a low maximum Drain-Source On-Resistance of 400mΩ at a Gate-Source Voltage of 10V. The Gate Threshold Voltage is a maximum of 5.0V, and the Gate-Source Voltage is rated at ±30V.
With a typical Input Capacitance of 720pF and a typical Total Gate Charge of 14nC, the TK12A60U is suitable for various switching applications, including voltage regulators.
The component is housed in a TO-220SIS package, designed for through-hole mounting. Its dimensions are 10.0mm x 15.0mm x 4.5mm, and it has 3 pins. The device has a power dissipation rating of 35W.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.09 | $3.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 600V.
The continuous Drain Current is 12A.
The maximum Drain-Source On-Resistance is 400mΩ at VGS=10V.
The maximum Gate Threshold Voltage is 5.0V.
The TK12A60U is supplied in a TO-220SIS package.
The TK12A60U is designed for through-hole mounting.