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IRF630B The IRF630B is an N-Channel enhancement mode power MOSFET from ON Semiconductor. It offers a 200V breakdown voltage and 9A continuous drain current in a TO-220 package.
Mfr Part #:

IRF630B

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The IRF630B is an N-Channel enhancement mode power MOSFET from ON Semiconductor. It offers a 200V breakdown voltage and 9A continuous drain current in a TO-220 package.
✓ Total Stock: 210 pcs
$ Price Range: $0.71

IRF630B Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
130 pcs
On Request
130 pcs On Request 1 On Request On Request On Request On Request On Request
DYNACO PRODUCTS ✓
Non-Authorised Inventory information
80 pcs
On Request
80 pcs On Request 1 On Request On Request On Request On Request On Request
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IRF630B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Operating Temperature Range
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IRF630B Description

Short technical summary and product information.

The IRF630B is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor using a proprietary planar DMOS technology. This advanced technology is designed to minimize on-state resistance and provide superior switching performance.

 

Key electrical specifications include a Drain-Source Voltage of 200V and a continuous Drain Current of 9.0A at 25°C. The device features a low gate charge and fast switching capabilities, making it suitable for various power applications.

 

With a maximum power dissipation of 72W at 25°C and a junction-to-case thermal resistance of 1.74°C/W, the IRF630B is designed for efficient operation. It operates within a temperature range of -55°C to +150°C.

 

The MOSFET is housed in a TO-220 package, suitable for through-hole mounting. Its robust design allows it to withstand high energy pulses in avalanche and commutation modes, making it well-suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control applications.

IRF630B Quick Information

Product Type: MOSFET
Canonical Name: IRF630B N-Channel MOSFET
Subcategory: Single MOSFET

IRF630B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF630B Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630B Features

  • 200V N-Channel enhancement mode MOSFET.
  • 9.0A continuous drain current at 25°C.
  • Low gate charge and fast switching.
  • TO-220 package for through-hole mounting.
  • Suitable for high efficiency power applications.

IRF630B Applications

  • High efficiency DC/DC converters.
  • Switch mode power supplies.
  • DC-AC converters for UPS.
  • Motor control applications.

IRF630B FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IRF630B?

The maximum continuous drain current for the IRF630B is 9.0A at 25°C.

What is the breakdown voltage of the IRF630B?

The Drain-Source Breakdown Voltage (BVDSS) for the IRF630B is 200V.

What package type is the IRF630B available in?

The IRF630B is available in a TO-220 package.

What is the operating temperature range for the IRF630B?

The operating and storage temperature range for the IRF630B is -55°C to +150°C.

What is the maximum power dissipation of the IRF630B?

The maximum power dissipation for the IRF630B is 72W at 25°C.

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