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430 pcs
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430 pcs | On Request | 1 | On Request | On Request | 09+NOPB | On Request | On Request |
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The Toshiba TK12A50D is a silicon N-Channel MOS Type (π-MOSⅦ) Field Effect Transistor. It is designed for switching regulator applications and features a low drain-source ON-resistance of 0.45 Ω (typical) and a maximum of 0.52 Ω. The device has a drain-source voltage rating of 500V and a continuous drain current of 12A.
This MOSFET operates in enhancement mode with a gate threshold voltage (Vth) between 2V and 4V at 10V VDS and 1.0mA ID. It is 100% avalanche tested, ensuring robust performance and reliable operation. The component comes in a 3-pin TO-220NIS package suitable for through-hole mounting.
Key electrical characteristics include a typical drain-source on-resistance of 0.45 Ω and a maximum of 0.52 Ω under specific test conditions. The gate threshold voltage ranges from 2V to 4V. The device is rated for a maximum drain-source voltage of 500V and a continuous drain current of 12A.
The drain-source voltage rating for the TK12A50D is 500V.
The continuous drain current for the TK12A50D is 12A.
The typical ON-resistance of the TK12A50D is 0.45 Ω.
The gate threshold voltage (Vth) for the TK12A50D is between 2V and 4V.
The TK12A50D MOSFET is supplied in a TO-220NIS package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TK12A50D is 1 Unlimited.