| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,800 pcs
|
6800 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | 2026-06-03 08:15:20 | |
|
4,571 pcs
|
4571 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
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| Package / Case |
The Toshiba TK12A50D is an N-Channel Silicon MOSFET from the π-MOSⅦ series, suitable for switching regulator applications. This device features a low drain-source ON-resistance, with a typical value of 0.45 Ω at 10V VGS and 12A ID, and a maximum of 0.52 Ω. The gate threshold voltage (Vth) ranges from 2V to 4V under specific test conditions (VDS = 10 V, ID=1.0mA).
With a maximum drain-source voltage rating of 500V and a continuous drain current of 12A, the TK12A50D is designed for robust performance. It is packaged in a 3-pin TO-220NIS through-hole configuration. The device has undergone 100% avalanche testing, indicating reliability under specific overvoltage conditions. Minimum lot-to-lot variations contribute to robust device performance and reliable operation.
500V.
12A.
0.45Ω at VGS=10V.
2V to 4V.
TO-220NIS through-hole package.
3 pins.