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170 pcs
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170 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| SVHC Present |
The Toshiba TK12A50D is an N-Channel Silicon MOSFET from the π-MOSⅦ series, suitable for switching regulator applications. It features a low drain-source ON-resistance, with a typical value of 0.45 Ω and a maximum of 0.52 Ω at VGS = 10 V and ID = 12 A. The device has a drain-source voltage rating of 500V and a continuous drain current capability of 12A.
This MOSFET operates in enhancement mode with a gate threshold voltage (Vth) between 2V and 4V (VDS = 10 V, ID=1.0mA). It is 100% avalanche tested, ensuring robust performance and reliable operation with minimum lot-to-lot variations.
The TK12A50D comes in a 3-pin TO-220NIS package, designed for through-hole mounting. Its specifications make it a suitable component for power supply designs and other switching applications where efficiency and reliability are critical.
The typical drain-source on-resistance is 0.45 Ω, with a maximum of 0.52 Ω.
The maximum drain-source voltage is 500V.
The continuous drain current rating is 12A.
The gate threshold voltage is between 2V and 4V.
It is supplied in a TO-220NIS package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.