BUK9Y3R0-40E
Nexperia USA Inc.
The Nexperia BUK9Y3R0-40E is an N-channel logic level MOSFET designed for high-performance automotive applications. It features a 40V drain-source voltage and a low on-state resistance.
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2,069 pcs
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2069 pcs | On Request | 1 | On Request | On Request | 1343+ | On Request | On Request | |
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1,525 pcs
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1525 pcs | On Request | 1 | On Request | On Request | 1343+ | On Request | On Request |
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The Toshiba TK100S04N1L is a silicon N-channel MOSFET from the U-MOS III-H series, suitable for automotive applications, switching voltage regulators, and motor drivers. It features a low drain-source on-resistance of 1.9 mΩ (typ.) at VGS = 10 V and a low leakage current of 10 µA (max) at VDS = 40 V. The enhancement mode MOSFET has a threshold voltage (Vth) ranging from 1.5 to 2.5 V.
This component is housed in a DPAK+ package, designed for surface mounting. Key absolute maximum ratings include a drain-source voltage (VDSS) of 40 V, a continuous drain current (ID) of 100 A, and a pulsed drain current (IDP) of 200 A. The maximum power dissipation (PD) is 180 W at a case temperature of 25°C. Thermal characteristics include a channel-to-case thermal resistance (Rth(ch-c)) of 0.83 °C/W.
The operating temperature range is from -55°C to 175°C, with a storage temperature range also from -55°C to 175°C. The device is sensitive to electrostatic discharge and should be handled with care. Commercial production started in January 2013.
40V.
DPAK+ surface mount package.
175°C.
1.9mΩ at VGS=10V.
100A.
1.5V to 2.5V at VDS=10V, ID=0.5mA.
114mJ.
