BUK9Y3R0-40E
Nexperia USA Inc.
The Nexperia BUK9Y3R0-40E is an N-channel logic level MOSFET designed for high-performance automotive applications. It features a 40V drain-source voltage and a low on-state resistance.
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The NXP Semiconductors BUK764R2-80E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a SOT404 (D2PAK) package. This component is designed and qualified to AEC Q101 standards for high-performance automotive applications.
Key electrical specifications include a maximum drain-source voltage of 80V and a continuous drain current of 120A at 25°C. The drain-source on-state resistance (RDSon) is a maximum of 4.2 mΩ at 25A and 10V. The device is rated for a maximum total power dissipation of 324W at 25°C.
This MOSFET is suitable for thermally demanding environments with a junction temperature rating of 175°C. Its applications include 12V, 24V, and 48V automotive systems, electric and electro-hydraulic power steering, motor control, lamps, solenoid control, start-stop micro-hybrid applications, and transmission control.
The D2PAK package is designed for surface mounting, making it suitable for automated assembly processes. The true standard level gate with a VGS(th) rating greater than 1V at 175°C ensures reliable operation in demanding conditions.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The continuous drain current is 120A at 25°C.
The maximum on-state resistance is 4.2 mΩ at 25A and 10V.
The BUK764R2-80E is available in a D2PAK (SOT404) package.
The maximum junction temperature is 175°C.
