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300,000 pcs
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300000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BUK9Y3R0-40E is an N-channel logic level MOSFET utilizing TrenchMOS technology, packaged in an LFPAK56 (Power SO8) form factor. This component is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications.
Key electrical specifications include a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 100A at 25°C. The drain-source on-state resistance (RDSon) is a low 3 mΩ at 25A and 5V gate-source voltage, ensuring efficient power switching. The device also offers a repetitive avalanche rating and is suitable for thermally demanding environments with a high operating temperature rating.
Applications for the BUK9Y3R0-40E include 12V automotive systems, motor, lighting, and solenoid control, start-stop micro-hybrid applications, and transmission control. Its true logic level gate with a VGS(th) rating greater than 0.5V at 175°C further enhances its utility in various automotive power management scenarios.
The MOSFET is housed in an LFPAK56, Power-SO8 package, designed for surface mounting. This package type is known for its thermal performance, making it ideal for applications where heat dissipation is critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is 40 V.
The maximum continuous drain current (ID) is 100 A.
The on-state resistance (RDSon) is a maximum of 3 mΩ at 25A and 5V gate-source voltage.
The BUK9Y3R0-40E is supplied in an LFPAK56, Power-SO8 package.
The operating temperature range is -55°C to 175°C.
Yes, the BUK9Y3R0-40E is designed and qualified to AEC-Q101 standard.