Si2333DS-T1
Vishay
The Vishay Semiconductors Si2333DS-T1 is a P-Channel MOSFET with a 12V drain-source breakdown voltage and 4.1A continuous drain current. It is supplied in a SOT-23-3 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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393,043 pcs
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393043 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Toshiba TBD62003AFWG is a gate driver component designed for power management applications. This device features a 7-channel DMOS transistor array, capable of handling up to 50V and 0.5A per channel.
Built with Silicon technology, the TBD62003AFWG is suitable for various driving applications. The component is supplied in Cut Tape packaging, with a factory pack quantity of 2000 units. Its specifications indicate a RoHS3 Compliant status, Moisture Sensitivity Level 1, and REACH Unaffected status, though these are based on existing database information with low confidence.
This gate driver is part of the TBD62003 series from Toshiba, falling under the broader category of Interface ICs. Its design is focused on providing reliable power management solutions for electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.20 | $2.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Each channel is rated for a maximum drain-source voltage of 50V.
Each channel can handle a continuous drain current of 0.5A.
The device has 7 channels.
The device is supplied in cut tape packaging.
The factory pack quantity is 2000 units.