| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,483 pcs
|
14483 pcs | On Request | 1 | On Request | On Request | 1308+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,180 pcs
|
2180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSS138PW is a single N-Channel MOSFET designed for general-purpose switching applications. It features a drain-source breakdown voltage of 60V and can handle a continuous drain current of up to 320mA at ambient temperature.
Key electrical characteristics include a typical on-resistance of 1.6 Ohms and a gate-source threshold voltage of 0.9V. The MOSFET operates within a temperature range of -55C to +150C. It is housed in a compact SOT-323 surface-mount package, suitable for space-constrained designs.
This device is constructed using silicon technology and operates in enhancement mode. Its typical power dissipation is rated at 260mW at ambient temperature and 830mW at case temperature. The MOSFET also exhibits typical rise and fall times of 3ns and 4ns respectively, with turn-on and turn-off delay times of 2ns and 9ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60 V.
The continuous drain current is 320 mA.
The typical power dissipation is 260 mW at ambient temperature and 830 mW at case temperature.
The typical on-resistance is 1.6 Ohms.
The gate-source threshold voltage is 900 mV.
The operating temperature range is from -55 C to +150 C.
The BSS138PW MOSFET is supplied in a SOT-323 surface-mount package.