SUP90N06-5m0P
VBsemi
The VBsemi SUP90N06-5m0P is an N-Channel MOSFET designed for high current and voltage applications. It features a 60V drain-source voltage and a maximum continuous drain current of 120A.
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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUP28N15-52-E3 from VBsemi is a single N-channel MOSFET designed for various electronic applications. This component features a Trench Technology construction, providing efficient performance.
Key electrical characteristics include a drain-source voltage (Vds) rating of 150V and a continuous drain current (Id) of 50A. The gate-source voltage (Vgs) is rated at ±20V, with a typical threshold voltage (Vth) of 3V. The on-resistance (Rds(on)) at 10V is specified as 30mΩ, indicating low conduction losses.
This MOSFET is housed in a standard TO220 package, suitable for through-hole mounting. Its N-channel polarity makes it a versatile component for switching and amplification circuits. The product is described as RoHS3 Compliant, MSL Level 1, and REACH Unaffected, though these compliance statuses are noted with low confidence due to unverified data.
VBsemi positions this part as an exclusive agency product, directly from the manufacturer. While specific applications are not detailed, its specifications suggest suitability for power management and general-purpose switching tasks where a 150V, 50A MOSFET is required.
The drain-source voltage rating is 150V.
The continuous drain current is 50A.
The typical on-resistance is 30mΩ at 10V gate-source voltage.
It comes in a TO220 package.
The typical gate threshold voltage is 3V.
The maximum gate-source voltage is ±20V.
It uses Trench technology.