| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,029 pcs
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6029 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The SUP90N06-5m0P from VBsemi is a high-performance N-Channel MOSFET utilizing Trench technology, housed in a TO220 package. This component is engineered for demanding applications requiring high current and voltage handling capabilities. It boasts a drain-source voltage (VDS) of 60V and can sustain a maximum continuous drain current (ID) of 120A. The MOSFET exhibits a low on-resistance (RDS(ON)) of 5mΩ at a gate-source voltage (VGS) of 10V, ensuring minimal power loss and high efficiency.
With a gate-source voltage (VGS) tolerance of ±20V and a typical gate threshold voltage (Vth) of 3V, the SUP90N06-5m0P offers robust control characteristics. Its advanced Trench technology contributes to excellent switching performance, making it suitable for high-frequency and high-power electronic devices. The TO220 package facilitates through-hole mounting, suitable for various industrial and consumer electronics designs.
This MOSFET is an ideal choice for power conversion systems, including DC-DC converters and AC-DC power supplies, where its low conduction losses enhance overall efficiency. It is also well-suited for electric vehicle (EV) power management, battery management systems (BMS), industrial motor drives, control systems, and battery-powered consumer electronics, contributing to reduced energy consumption and improved system reliability.
60V.
5mΩ at VGS=10V.
120A.
TO220.
3V typical.
Trench.