SUP90N06-5m0P
VBsemi
The VBsemi SUP90N06-5m0P is an N-Channel MOSFET designed for high current and voltage applications. It features a 60V drain-source voltage and a maximum continuous drain current of 120A.
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5,550 pcs
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5550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK552-50B is a single N-channel MOSFET manufactured by NXP Semiconductors, designed for efficient power management applications. It utilizes advanced Trench technology to achieve a low on-resistance of 72mΩ at a gate-source voltage of 10V, coupled with a high continuous drain current capability of 20A.
This MOSFET is rated for a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its robust design and specifications make it suitable for various applications including power management modules, motor drivers, battery management systems, solar inverters, and industrial control systems where efficient current handling and reduced power loss are critical.
The device comes in a standard TO220 package, facilitating through-hole mounting. Its performance characteristics support applications requiring high efficiency and reliability in power conversion and control circuits.
| Qty | Low | High |
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| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) for the BUK552-50B is 60V.
The typical on-resistance (RDS(ON)) of the BUK552-50B at VGS=10V is 72mΩ.
The maximum continuous drain current (ID) for the BUK552-50B is 20A.
The BUK552-50B MOSFET is supplied in a TO220 package.
The BUK552-50B MOSFET uses Trench technology.