SUD19N20-90
Vishay
The Vishay Dale SUD19N20-90 is an N-Channel MOSFET designed for primary side switching applications. It offers a 200V drain-source voltage and a continuous drain current of 19A.
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44,398 pcs
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44398 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay SUD50N10-18P is an N-Channel TrenchFET Power MOSFET with a 100V drain-source breakdown voltage. It is rated for a continuous drain current of 50A at 25°C case temperature and features a low on-resistance of 0.0185 Ohms at 10V gate-source voltage.
This MOSFET is suitable for applications requiring efficient power switching, such as primary side switching in isolated DC/DC converters. It operates over a wide temperature range from -55°C to 175°C and is packaged in a TO-252 surface-mount package.
Key electrical characteristics include a gate-source threshold voltage of 2.5V to 5V and a gate-source leakage current of ±100 nA. The device also offers a maximum power dissipation of 136.4W at 25°C case temperature, with thermal resistance ratings for junction-to-case and junction-to-ambient.
The drain-source breakdown voltage is 100 V.
The typical gate-source threshold voltage is 2.5 V.
The maximum continuous drain current is 50 A at 25°C case temperature.
The typical on-resistance is 0.0185 Ohms at a gate-source voltage of 10 V.
The operating junction and storage temperature range is -55°C to 175°C.
The package type is TO-252.