| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,399 pcs
|
44399 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Lead Style | |
| Mounting Type | |
| Package / Case |
The Vishay SUD50N10-34P is an N-Channel Power MOSFET designed for applications requiring high performance and reliability. It offers a Drain-Source Voltage (Vds) of 100V and a low Drain-Source On-State Resistance (rDS(on)) as low as 0.028 Ohms at a Vgs of 10V and 7A.
Key electrical characteristics include a typical Gate Threshold Voltage (Vgs(th)) of 2.8V and a continuous drain current of up to 20A at 25°C case temperature. Dynamic characteristics such as Input Capacitance (Ciss) of 1800pF and Total Gate Charge (Qg) of 24nC are also specified.
This MOSFET is housed in a TO-252 package, suitable for surface mounting. Its features make it suitable for applications like LCD TV inverters and LCD backlights. The operating temperature range is from -55°C to 150°C.
It is designed with TrenchFET Power MOSFET technology and is 100% UIS Tested, ensuring robust performance. The device also meets RoHS3 compliance standards.
The Drain-Source Breakdown Voltage (Vds) is 100V.
The typical Gate Threshold Voltage (Vgs(th)) is 2.8V.
The typical Drain-Source On-State Resistance (rDS(on)) is 0.028 Ohms at VGS = 10V and ID = 7A.
The typical Total Gate Charge (Qg) is 24nC.
The package type is TO-252.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the RoHS status is RoHS3 Compliant.