| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,392 pcs
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44392 pcs | On Request | 1 | On Request | On Request | 1905+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The SUD20N10-66L is an N-Channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current rating of 16.9A at a case temperature of 25°C. The device achieves a low maximum on-state resistance of 0.066 Ohms with a 10V gate drive, and 0.080 Ohms at 4.5V, enabling efficient operation in low-voltage gate drive circuits.
The MOSFET is housed in a surface-mount TO-252 (DPAK) package, suitable for automated assembly. It is rated for a maximum power dissipation of 41.7W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. The device is lead-free and halogen-free, compliant with environmental standards.
The maximum drain-source voltage is 100V.
The continuous drain current is 16.9A at a case temperature of 25°C.
The maximum on-state resistance is 0.066 Ohms at VGS = 10V.
It is available in a TO-252 surface-mount package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the device is lead-free and halogen-free.