| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,014 pcs
|
4014 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The SECOS STT3470N is an N-Channel Enhancement Mode MOSFET utilizing a High Cell Density trench process. This design ensures minimal power loss and heat dissipation, making it suitable for applications like DC-DC converters and power management circuits.
Key electrical characteristics include a maximum drain-source voltage of 100V and a continuous drain current of 3.2A. The on-resistance (Rds(on)) is typically 100 mOhm at a gate-source voltage of 10V and 3.2A drain current, and 127 mOhm at 4.5V gate-source voltage. The maximum gate-source voltage is ±20V, with a typical gate threshold voltage ranging from 2V to 4V.
This MOSFET is available in a compact SOT-23-6 surface mount package, facilitating integration into space-constrained designs. The mounting type is surface mount, suitable for automated assembly processes.
100V.
3.2A.
Typical 100mOhm at VGS=10V, ID=3.2A; 127mOhm at VGS=4.5V, ID=3.2A.
SOT-23-6.
Typical 3V, range 2V to 4V.
Yes, surface mount mounting type.
±20V maximum.
