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STP3NA90 The STMicroelectronics STP3NA90 is an N-Channel Enhancement Mode Fast Power MOS Transistor. It features a 900V breakdown voltage and a maximum power dissipation of 40W.
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STP3NA90

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STP3NA90 is an N-Channel Enhancement Mode Fast Power MOS Transistor. It features a 900V breakdown voltage and a maximum power dissipation of 40W.
✓ Total Stock: 100 pcs
$ Price Range: $0.99

STP3NA90 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
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100 pcs
On Request
100 pcs On Request 1 On Request On Request 97 On Request On Request
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STP3NA90 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Power Dissipation
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STP3NA90 Description

Short technical summary and product information.

The STMicroelectronics STP3NA90 is a high-performance N-Channel Enhancement Mode Fast Power MOS Transistor designed for demanding power applications. This component boasts a significant breakdown voltage of 900V, ensuring robust operation under high voltage stress.

 

With a maximum power dissipation rating of 40W, the STP3NA90 is capable of handling substantial power loads. Its minimum drain-source resistance is specified at 5.3Ω, contributing to efficient power transfer. The maximum operating temperature is 150°C, allowing for reliable performance in elevated thermal environments.

 

This power MOSFET is manufactured by STMicroelectronics, a recognized leader in semiconductor technology. Its fast switching characteristics make it suitable for various power switching applications where speed and efficiency are critical. The device is designed for general-purpose power applications requiring a reliable and robust N-channel MOSFET.

STP3NA90 Quick Information

Product Type: MOSFET Transistor
Canonical Name: STMicroelectronics STP3NA90 N-Channel Enhancement Mode Fast Power MOS Transistor
Subcategory: Special Purpose

STP3NA90 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP3NA90 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP3NA90 Features

  • N-Channel Enhancement Mode Fast Power MOS Transistor.
  • 900V minimum breakdown voltage.
  • 40W maximum power dissipation.
  • 150°C maximum operating temperature.
  • 5.3Ω minimum drain-source resistance.

STP3NA90 Applications

  • Suitable for high voltage power switching.
  • Ideal for power supply applications.
  • Used in motor control circuits.
  • Applicable in general power applications.

STP3NA90 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the STP3NA90?

The minimum breakdown voltage for the STP3NA90 is 900V.

What is the maximum power dissipation of the STP3NA90?

The STP3NA90 has a maximum power dissipation of 40W.

What is the maximum operating temperature for the STP3NA90?

The STP3NA90 can operate at a maximum temperature of 150°C.

What is the minimum drain-source resistance of the STP3NA90?

The minimum drain-source resistance of the STP3NA90 is 5.3Ω.

What type of transistor is the STP3NA90?

The STP3NA90 is an N-Channel Enhancement Mode Fast Power MOS Transistor.

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