| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TK13A65U(STA4,Q) from Toshiba is an N-Channel MOSFET designed for various electronic applications. It features a high drain-source voltage rating of 650V and can handle a continuous drain current of 13A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor technology and belongs to the DTMOSII series. Key electrical characteristics include a maximum on-resistance of 380mOhm at 6.5A and 10V, a gate threshold voltage of 5V at 1mA, and a maximum gate-to-source voltage of ±30V. Input capacitance (Ciss) is rated at 950pF maximum at 10V, and gate charge (Qg) is 17nC maximum at 10V.
With a maximum power dissipation of 40W (Tc) and an operating temperature range of 150°C (TJ), the TK13A65U(STA4,Q) is suitable for demanding environments. It is mounted using a through-hole method and comes in a TO-220SIS package, specifically the TO-220-3 Full Pack variant.
The component is RoHS compliant, indicating adherence to environmental standards for hazardous substances. Its MSL rating is 1 Unlimited, and REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 650V.
The continuous drain current (Id) is 13A at 25°C.
The maximum on-resistance (Rds On) is 380mOhm at 6.5A and 10V.
The device is supplied in a TO-220SIS package, specifically TO-220-3 Full Pack, and is mounted through hole.
The operating temperature is 150°C (TJ).
Yes, the RoHS status is Compliant.