| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,008 pcs
|
3008 pcs | On Request | 1 | On Request | On Request | 1002+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Technology |
The TK8A55DA(STA4,Q,M) from Toshiba is a high-performance N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 7.5A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.07 Ohms at 3.8A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 1mA, and a maximum gate charge (Qg) of 16 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 800 pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 40W. It is supplied in a TO-220SIS through-hole package, suitable for various power electronics designs.
The maximum drain-source voltage (Vdss) is 550V.
The continuous drain current (Id) at 25°C is 7.5A.
The maximum Rds On is 1.07 Ohms when Id is 3.8A and Vgs is 10V.
The operating temperature range is up to 150°C.
It is supplied in a TO-220SIS through-hole package.