TK25S06N1L
Toshiba
The Toshiba TK25S06N1L is an N-Channel MOSFET designed for automotive and switching regulator applications. It offers a 60V drain-source voltage and a low on-resistance.
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STB120NF10 is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing their STripFET™ II process. This device is designed to minimize on-resistance, making it suitable for high-efficiency, high-frequency isolated DC-DC converters in telecom and computer applications. It also caters to applications with low gate drive requirements.
Key electrical ratings include a 100V drain-source voltage and a maximum continuous drain current of 110A at 25°C, which reduces to 77A at 100°C. The on-resistance is exceptionally low, specified at a maximum of 0.009 Ohms under typical test conditions. The device boasts exceptional dv/dt capability and is 100% avalanche tested.
Available in TO-247, TO-220, D²PAK, and TO-220FP packages, the STB120NF10 offers flexibility for various mounting requirements. Thermal management is supported by a junction-to-case thermal resistance of 0.48°C/W for TO-220, TO-247, and D²PAK packages, and 3.33°C/W for the TO-220FP package.
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the STB120NF10 is 100V.
The maximum continuous drain current for the STB120NF10 at 25°C is 110A.
The on-resistance of the STB120NF10 is a maximum of 0.009 Ohms.
The STB120NF10 is available in TO-247, TO-220, D²PAK, and TO-220FP packages.
The operating junction temperature range for the STB120NF10 is -55 to 175°C.