MAX4374HEUB
Analog Devices / Maxim Integrated
The MAX4374HEUB from Analog Devices is an IC designed for current sensing and power management applications. It features a RoHS3 compliant status and MSL 1 rating.
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 524 | On Request | On Request |
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| SVHC Present |
The SST39VF040-70-4C-NHE is a 1 Mbit (128K x 8) CMOS Multi-Purpose Flash memory manufactured using Microchip's SuperFlash technology. It offers a fast read access time of 70 ns and supports single voltage read and write operations within a 2.7V to 3.6V range.
This flash memory provides superior reliability with an endurance of 100,000 cycles and data retention exceeding 100 years. It features low power consumption with an active current of 5 mA and a standby current of 1 µA at 14 MHz. The device supports uniform 4 KByte sector erase capability, with sector erase times of 18 ms and chip erase times of 70 ms.
Programming operations are efficient, with a byte program time of 14 µs and a chip rewrite time of 8 seconds for the SST39VF040. It utilizes Toggle Bit or Data# Polling for end-of-write detection and conforms to JEDEC standard pinouts for x8 memories. The SST39VF040-70-4C-NHE is available in a 32-lead TSOP package suitable for surface mounting.
All devices are RoHS compliant. This flash memory is suitable for various applications requiring non-volatile data storage.
| Qty | Low | High |
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| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device operates from a single power supply of 2.7V to 3.6V.
It is available in a 32-lead TSOP package measuring 8mm x 14mm.
It supports 100,000 erase/program cycles typical.
Data retention is greater than 100 years.
It is organized as 128K x 8 bits.
Sector erase is 18 ms typical, and chip erase is 70 ms typical.
Byte programming takes 14 µs typical.
