DMN3731UFB4-7B
Diodes Incorporated
The DMN3731UFB4-7B is a 30V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It offers low on-resistance and ESD protection in a compact X2-DFN1006-3 package.
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11,398 pcs
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11398 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The SSF2320Y from Good-Ark Semiconductor is an N-Channel MOSFET designed for high efficiency applications. It features a 20V drain-source voltage and a continuous drain current of 800mA. The advanced MOSFET process technology results in low on-resistance and low gate charge, contributing to efficient switching performance.
Key electrical characteristics include a typical static drain-source on-resistance of 200mΩ at VGS=4.5V and ID=0.5A. The gate threshold voltage ranges from 0.3V to 1V. With a fast switching capability and reverse body recovery, this MOSFET is well-suited for use in high efficiency switched mode power supplies and a variety of other applications.
The device is packaged in a SOT-523 surface mount package. Its operating junction temperature range is -55°C to +150°C, and the storage temperature range is also -55°C to +150°C.
| Qty | Low | High |
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| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum continuous drain current is 800mA at 25°C case temperature.
The typical on-resistance is 200mΩ at VGS=4.5V and ID=0.5A.
The SSF2320Y is available in a SOT-523 surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The gate threshold voltage ranges from 0.3V minimum to 1V maximum, with a typical value of 0.6V.
