DMN3731UFB4-7B The DMN3731UFB4-7B is a 30V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It offers low on-resistance and ESD protection in a compact X2-DFN1006-3 package.
Mfr Part #:

DMN3731UFB4-7B

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN3731UFB4-7B is a 30V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It offers low on-resistance and ESD protection in a compact X2-DFN1006-3 package.
Total Stock: 14,091,020 pcs

DMN3731UFB4-7B Available from 1 distributor

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DMN3731UFB4-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape Width
Technology
UL Flammability Rating
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN3731UFB4-7B Description

Short technical summary and product information.

The DMN3731UFB4-7B is a 30V N-Channel Enhancement Mode MOSFET designed by Diodes Incorporated for high-efficiency power management. It features a maximum drain-source voltage of 30V and a continuous drain current of 1.2A at 25°C (0.9A at 70°C). The device is optimized for low on-resistance, with 460mOhm typical at Vgs=4.5V and 560mOhm at Vgs=2.5V, ensuring minimal conduction losses in battery-powered applications.

 

This MOSFET is housed in an ultra-compact X2-DFN1006-3 surface-mount package with a 0.4mm profile, offering a footprint ten times smaller than a standard SOT23. It supports a gate drive voltage as low as 1.8V, making it suitable for direct battery driving. The device also includes ESD protection on the gate and is fully RoHS, Halogen-Free, and Antimony-Free compliant. Operating temperature range is -55°C to 150°C.

 

Typical applications include load switching, portable electronics, and power management functions. The device offers low gate charge (5.5nC) and low input capacitance (73pF) for efficient switching at moderate frequencies. With MSL Level 1 moisture sensitivity and UL 94V-0 flammability rating, it is designed for robust and reliable operation in space-constrained designs.

DMN3731UFB4-7B Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: DMN3731UFB4-7B - 30V N-Channel Enhancement Mode MOSFET
Subcategory: Single

DMN3731UFB4-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN3731UFB4-7B Features

  • 0.4mm ultra low profile package.
  • 10x smaller footprint than SOT23.
  • Low 460mOhm on-resistance at 4.5V.
  • ESD protected gate for robustness.
  • RoHS, Halogen-Free, and Antimony-Free.

DMN3731UFB4-7B Applications

  • Ideal for load switch applications.
  • Used in portable battery-powered devices.
  • Suitable for power management functions.

DMN3731UFB4-7B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN3731UFB4-7B?

The maximum drain-source voltage (Vdss) is 30V.

What package is the DMN3731UFB4-7B available in?

It is available in a 3-XFDFN surface mount package (X2-DFN1006-3).

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the DMN3731UFB4-7B RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, halogen-free, and antimony-free.

What is the maximum continuous drain current rating?

The maximum continuous drain current is 1.2A at 25°C and 0.9A at 70°C.

What is the gate threshold voltage of this MOSFET?

The maximum gate threshold voltage is 950mV at Id=250µA.

Does the DMN3731UFB4-7B include ESD protection?

Yes, the gate is ESD protected.

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