| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
152 pcs
|
152 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Manufacturer Name | |
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| Package / Case | |
| Power Dissipation | |
| Tape & Reel |
The Vishay SI7461DP-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of -60V. It offers a continuous drain current of up to -14.4A at 25°C and a typical Rds(on) of 14.5 mOhm at VGS = -10V.
This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C and has a low profile of 1.07 mm.
Key electrical characteristics include a gate-source voltage of ±20V, a pulsed drain current of -60A, and a maximum power dissipation of 5.4W at 25°C. The device also features TrenchFET® technology for low thermal resistance.
Applications for this MOSFET include power switching, load switching, and power management circuits where efficient P-channel control is required.
The drain-source breakdown voltage is -60 V.
The continuous drain current at 25°C is -14.4 A.
The typical Rds(on) at VGS = -10V is 14.5 mOhm.
The SI7461DP-T1-GE3 is in a PowerPAK SO-8 package.
The operating junction and storage temperature range is -55°C to +150°C.