| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,394 pcs
|
27394 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Vishay Siliconix SI7222DN is a high-performance dual N-Channel MOSFET designed for applications such as primary side switching and synchronous rectification. It offers a drain-source breakdown voltage of 40V and a low on-state resistance, with typical values of 0.042 Ω at VGS = 10V and 0.047 Ω at VGS = 4.5V.
The MOSFET is built using Vishay's TrenchFET technology, providing low thermal resistance and a small footprint. It is packaged in the PowerPAK 1212-8, a low-profile surface-mount package measuring 3.30 mm by 3.30 mm.
Key electrical characteristics include a continuous drain current of up to 6A (Tc = 25°C) and a pulsed drain current of 24A. The operating junction and storage temperature range is -55°C to 150°C.
This component is suitable for power management designs requiring efficient switching and minimal space. Its halogen-free construction aligns with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40 V minimum with VGS = 0 V and ID = 250 µA.
Continuous drain current is 6 A at TC = 25 °C and 5 A at TC = 70 °C.
Maximum on-resistance is 0.042 Ω at VGS = 10 V and 0.047 Ω at VGS = 4.5 V.
The gate-source threshold voltage ranges from 0.6 V to 1.6 V at VDS = VGS and ID = 250 µA.
The operating junction and storage temperature range is -55 °C to 150 °C.
The SI7222DN is available in a PowerPAK 1212-8 surface-mount package.