SMF28A-GS08
Vishay
The Vishay Dale SMF28A-GS08 is a TVS diode designed for transient voltage suppression. It offers a 28V operating voltage and 200W peak pulse power capability.
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free |
The Vishay Dale SI5853DC-T1 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage rating of 20V and a continuous drain current of 2.9A at 25°C, with a reduced rating of 2.3A at 85°C.
This MOSFET features a low on-resistance, with values as low as 0.086 Ohms at a Vgs of -4.5V. It also includes an integrated Schottky Diode with a typical forward voltage drop of 0.9V. The device operates within a temperature range of -55°C to 150°C.
The SI5853DC-T1 is supplied in a compact 1206-8 ChipFET package, suitable for surface mounting. This package type, along with its electrical characteristics, makes it ideal for applications requiring efficient power switching and space-saving designs.
Key electrical specifications include a gate-source voltage of ±8V, a gate threshold voltage typically around -0.45V, and a total gate charge of 4.2nC. The device also has a power dissipation rating of 1.5W at 25°C.
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| 1+ | $7.19 | $7.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating for the SI5853DC-T1 is 20V.
The continuous drain current of the SI5853DC-T1 is 2.9A at 25°C.
The typical on-resistance of the SI5853DC-T1 at Vgs = -4.5V is 0.086 Ohms.
The SI5853DC-T1 has an integrated Schottky Diode.
The SI5853DC-T1 is supplied in a 1206-8 ChipFET package.
The operating temperature range for the SI5853DC-T1 is -55°C to 150°C.