SI4925DDY-T1-GE3 The Vishay SI4925DDY-T1-GE3 is a Dual P-Channel MOSFET designed for load switches in applications like notebook and desktop PCs. It features a -30V drain-source voltage and a low on-state resistance.
Mfr Part #:

SI4925DDY-T1-GE3

Available from 2 distributors
Mfr Name: VIS
VIS
The Vishay SI4925DDY-T1-GE3 is a Dual P-Channel MOSFET designed for load switches in applications like notebook and desktop PCs. It features a -30V drain-source voltage and a low on-state resistance.
✓ Total Stock: 2,473 pcs

SI4925DDY-T1-GE3 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,012 pcs
2012 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
461 pcs
461 pcs On Request 1 On Request On Request 22+ On Request On Request

SI4925DDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Style
SVHC Present

SI4925DDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Si4925DDY is a Dual P-Channel MOSFET with a drain-source breakdown voltage of -30V and a continuous drain current of up to 8A. It is designed for applications such as load switches in notebook PCs, desktop PCs, and game stations.

 

This MOSFET offers a low on-state resistance, with a typical value of 0.029 Ω at VGS = -10V and ID = -7.3A. It operates within a temperature range of -55°C to 150°C and is housed in a compact SO-8 package, suitable for surface mounting.

 

The device features TrenchFET power MOSFET technology and is 100% UIS tested. It is also halogen-free, indicating a commitment to environmental standards.

SI4925DDY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4
Canonical Name: Vishay Si4925DDY Dual P-Channel 30-V MOSFET
Subcategory: P-Channel MOSFET

SI4925DDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4925DDY-T1-GE3 Features

  • Dual P-Channel MOSFET technology.
  • 30V drain-source breakdown voltage.
  • Low on-state resistance of 0.029 Ohms.
  • SO-8 surface-mount package.
  • Halogen-free construction.

SI4925DDY-T1-GE3 Applications

  • Ideal for notebook PC load switches.
  • Suitable for desktop PC applications.
  • Used in game station power management.
  • General load switching tasks.

SI4925DDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI4925DDY-T1-GE3?

The drain-source breakdown voltage is -30V.

What is the typical on-state resistance (Rds(on)) of the SI4925DDY-T1-GE3?

The typical on-state resistance is 0.029 Ohms at VGS = -10V and ID = -7.3A.

What is the continuous drain current (Id) for the SI4925DDY-T1-GE3?

The continuous drain current is 8A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI4925DDY-T1-GE3 supplied in?

It is supplied in an SO-8 package.

Is the SI4925DDY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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