SMF28A-GS08
Vishay
The Vishay Dale SMF28A-GS08 is a TVS diode designed for transient voltage suppression. It offers a 28V operating voltage and 200W peak pulse power capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Vishay Siliconix SI4500BDY is a TrenchFET® Power MOSFET designed as a complementary N- and P-Channel Half-Bridge. It is housed in a standard SO-8 package suitable for surface mounting.
Key electrical specifications include a maximum drain-source voltage of 20V for N-Channel and -20V for P-Channel. The device supports a gate-source voltage of ±12V. Continuous drain current ratings are up to 9.1A for N-Channel and -5.3A for P-Channel at 25°C.
On-state resistance is specified at 0.020 Ω typical for N-Channel (VGS = 4.5V, ID = 9.1A) and 0.060 Ω typical for P-Channel (VGS = -4.5V, ID = -5.3A). Thermal resistance from junction-to-ambient is typically 40°C/W for N-Channel and 41°C/W for P-Channel.
This MOSFET is compliant with RoHS Directive 2002/95/EC and is Halogen-free according to IEC 61249-2-21 definition. It is available in lead-free and halogen-free ordering options.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V for the N-Channel and -20V for the P-Channel.
The typical on-state resistance is 0.020 Ω for N-Channel at VGS = 4.5V, ID = 9.1A, and 0.060 Ω for P-Channel at VGS = -4.5V, ID = -5.3A.
The SI4500BDY is available in an SO-8 package.
Yes, the SI4500BDY is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the SI4500BDY is Halogen-free according to IEC 61249-2-21 Definition.