| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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| SVHC Present | |
| Tape & Reel |
The Vishay Siliconix SI4202DY-T1-GE3 is a Dual N-Channel Power MOSFET with a 30V drain-source breakdown voltage. It utilizes TrenchFET technology for enhanced performance and features low on-state resistance values of 0.0140 Ω at VGS = 10 V and 0.0170 Ω at VGS = 4.5 V.
This MOSFET is suitable for applications such as synchronous buck converters in notebooks and servers, as well as Set-Top Boxes (STB). It is rated for continuous drain currents up to 12.1 A at TC = 25 °C and operates within a junction temperature range of -55 °C to 150 °C.
The device comes in an SO-8 package and is surface-mounted. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The part is also 100% R g Tested and 100% UIS Tested.
The drain-source breakdown voltage is 30 V.
The typical on-state resistance at VGS = 10 V is 0.0140 Ω.
The typical on-state resistance at VGS = 4.5 V is 0.0170 Ω.
The continuous drain current at TC = 25 °C is 12.1 A.
The operating junction and storage temperature range is -55 °C to 150 °C.
The SI4202DY-T1-GE3 is available in an SO-8 package.
Yes, the SI4202DY-T1-GE3 is RoHS3 Compliant.