HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RFP8N20L is an N-Channel Logic Level Power Field Effect Transistor manufactured by Harris Semiconductor. This component is designed for power applications, featuring a robust breakdown voltage of 200V and a maximum power dissipation capability of 60W.
With a minimum drain-source resistance of 600mΩ, the RFP8N20L is suitable for various switching and amplification tasks. The transistor operates within a maximum temperature range of 150°C, ensuring reliability in demanding environments. Its design incorporates 3 terminals, facilitating integration into standard circuit configurations.
This MOSFET is a key component for engineers designing power management circuits, motor control systems, and general-purpose switching applications where high voltage and moderate power handling are required. The logic-level gate drive capability simplifies interfacing with microcontrollers and other low-voltage control logic.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the RFP8N20L is 200V.
The RFP8N20L has a maximum power dissipation of 60W.
The RFP8N20L can operate up to a maximum temperature of 150°C.
The minimum drain-source resistance for the RFP8N20L is 600mΩ.
The RFP8N20L is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the RFP8N20L is 1 Unlimited.
The RFP8N20L is REACH Unaffected.
