RFP10N15 The Intersil RFP10N15 is an N-Channel Enhancement-Mode Power Field-Effect Transistor designed for high-speed switching applications. It offers a 150V drain-source voltage and 10A continuous drain current.
Mfr Part #:

RFP10N15

Available from 1 distributors
Mfr Name: Intersil
Intersil
The Intersil RFP10N15 is an N-Channel Enhancement-Mode Power Field-Effect Transistor designed for high-speed switching applications. It offers a 150V drain-source voltage and 10A continuous drain current.
✓ Total Stock: 260 pcs
$ Price Range: $1.67

RFP10N15 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
260 pcs
260 pcs On Request 1 On Request On Request 2000 On Request On Request

RFP10N15 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Operating Temperature

RFP10N15 Description

Short technical summary and product information.

The Intersil RFP10N15 is an N-Channel Enhancement-Mode Power Field-Effect Transistor. It is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers requiring high speed and low gate-drive power. This device can be operated directly from integrated circuits.

 

Key electrical specifications include a maximum drain-source breakdown voltage of 150V and a continuous drain current of 10A. The static drain-source on-resistance is a low 0.3 Ohms at a drain current of 10A and gate-source voltage of 10V. The gate threshold voltage is 2V, and the zero gate voltage drain current is 0.6mA maximum at 150V drain-source voltage.

 

This MOSFET features nanosecond switching speeds and linear transfer characteristics, making it suitable for demanding switching applications. It is available in the JEDEC TO-220AB plastic package, which is suitable for through-hole mounting.

 

The operating temperature range is -55°C to +150°C, with a maximum power dissipation of 60W at 25°C case temperature. The device also has a maximum continuous drain current of 10A and a maximum drain-source voltage of 150V.

RFP10N15 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: RFP10N15 N-Channel Enhancement-Mode Power Field-Effect Transistor
Subcategory: N-Channel

RFP10N15 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFP10N15 Estimated Pricing

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1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFP10N15 Features

  • N-Channel Enhancement-Mode Power MOSFET
  • 150V Drain-Source Breakdown Voltage
  • 10A Continuous Drain Current
  • 0.3 Ohm Static Drain-Source On Resistance
  • Nanosecond Switching Speeds

RFP10N15 Applications

  • Switching regulators
  • Switching converters
  • Motor drivers
  • Relay drivers

RFP10N15 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RFP10N15?

The maximum drain-source voltage for the RFP10N15 is 150V.

What is the continuous drain current rating of the RFP10N15?

The RFP10N15 has a continuous drain current rating of 10A.

What is the static drain-source on-resistance of the RFP10N15?

The static drain-source on-resistance of the RFP10N15 is 0.3 Ohms when measured at a drain current of 10A and a gate-source voltage of 10V.

What is the maximum power dissipation for the RFP10N15?

The maximum power dissipation for the RFP10N15 is 60W at a case temperature of 25°C.

What is the operating temperature range of the RFP10N15?

The operating and storage temperature range for the RFP10N15 is -55°C to +150°C.

What package type is the RFP10N15 available in?

The RFP10N15 is available in the TO-220AB package.

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