| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
$0.47
|
1000 pcs |
$0.47
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The PZT2907AT1G is a PNP Silicon Epitaxial Transistor manufactured by Semiconductor Components, suitable for both linear and switching applications. This device is housed in a SOT-223 package, designed for medium power surface mount applications.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of -60 Vdc, a Collector-Base Voltage (VCBO) of -60 Vdc, and an Emitter-Base Voltage (VEBO) of -5.0 Vdc. The continuous Collector Current (IC) is rated at -600 mAdc.
Thermal specifications include a Total Device Dissipation (PD) of 1.5 W at 25°C ambient temperature and a Junction-to-Ambient thermal resistance (RthJA) of 83.3 °C/W. The operating and storage temperature range is from -65°C to +150°C. The device is AEC-Q101 Qualified and PPAP Capable, with Pb-Free packages available.
The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. Its formed leads absorb thermal stress during soldering, preventing damage to the die. The NPN complement to this device is the PZT2222AT1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 Vdc
-600 mAdc
SOT-223
-65°C to +150°C
Yes
RoHS3 Compliant
1 Unlimited
