| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,616,000 pcs
|
3616000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,277 pcs
|
3277 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
2,243 pcs
|
2243 pcs | On Request | 1 | On Request | On Request | 2010+ | On Request | On Request | |
|
1,960 pcs
|
1960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Toshiba 2SC2712GR is a silicon NPN bipolar junction transistor (BJT) designed for low-power applications. It comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 and a maximum of 400. The transistor can handle a maximum collector current of 150mA and has a collector-emitter breakdown voltage of 50V. Its transition frequency (fT) is a minimum of 80MHz.
The device features a maximum power dissipation of 150mW and a collector-emitter saturation voltage of 250mV at specified test conditions. The SOT-23 package is commonly used in surface-mount technology for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 50V.
The 2SC2712GR is available in a SOT-23 surface mount package.
The maximum collector current (I(C)) is 150mA.
The minimum transition frequency (f(T)) is 80MHz.
The DC current gain (hFE) ranges from 200 to 400.
The maximum power dissipation is 150mW.
The minimum collector-base breakdown voltage (V(BR)CBO) is 60V.