| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
340 pcs
|
340 pcs | On Request | 1 | On Request | On Request | 1529 | On Request | On Request | |
|
31 pcs
|
31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PUMH15,115 is an NPN/NPN Resistor-Equipped Transistor (RET) housed in an ultra-small SOT666 surface-mounted device (SMD) plastic package.
This transistor offers a 100 mA output current capability and includes built-in bias resistors, simplifying circuit design and reducing component count. Key electrical specifications include a 50 V collector-emitter voltage and a typical bias resistor R1 value of 4.7 kΩ.
The PUMH15,115 is suitable for low current peripheral driver applications, control of IC inputs, and can replace general-purpose transistors in digital applications. Its compact SOT666 package with a 0.5 mm pitch and 1.6 mm x 1.2 mm body dimensions makes it ideal for space-constrained designs.
Designed for surface mounting, this component simplifies pick and place operations, contributing to reduced manufacturing costs. The device operates within a wide ambient temperature range of -65 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The maximum output current (IO) is 100mA.
It is available in a 6TSSOP surface-mount package.
The maximum junction temperature (Tj) is 150°C.
Yes, it is RoHS3 compliant.