PMBS3906,215
NXP Semiconductors
The NXP Semiconductors PMBS3906,215 is a PNP general-purpose transistor. It features a 40V collector-emitter voltage and 100mA collector current capability.
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1,911 pcs
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1911 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,225 pcs
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1225 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BAT54A,215 is a planar Schottky barrier diode designed for ultra-high-speed switching applications. It features an integrated guard ring for stress protection and is encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a maximum reverse voltage of 30V and a typical forward voltage of 800mV at 100mA. The diode also exhibits low capacitance, making it suitable for line termination, voltage clamping, and reverse polarity protection.
This component is designed for surface mounting and comes in a 3-terminal SOT23 package with a 1.9 mm pitch. The body dimensions are 2.9 mm x 1.3 mm x 1 mm. The maximum total power dissipation is 250 mW at 25°C ambient temperature.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 30 V.
The typical forward voltage is 800 mV when the forward current is 100 mA.
The BAT54A,215 is supplied in a SOT23 plastic surface-mounted package.
This diode is used for ultra-high-speed switching, line termination, voltage clamping, and reverse polarity protection.
