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755 pcs
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755 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PMBS3906,215 is a PNP general-purpose transistor designed for switching and amplification applications. It comes in a compact SOT-23 (TO-236AB) surface-mounted device plastic package.
Key electrical specifications include a maximum collector-emitter voltage of -40V and a maximum collector current of -100mA. The DC current gain (hFE) ranges from 100 to 300 under typical test conditions (VCE = -1V, IC = -10mA, Tamb = 25°C). The transistor also has a maximum power dissipation of 250mW at 25°C ambient temperature.
This transistor is suitable for general-purpose switching and amplification tasks. Its small SOT-23 package makes it ideal for space-constrained designs. The NPN complement to this device is the PMBS3904.
Thermal characteristics include a junction-to-ambient thermal resistance of 500 K/W when mounted on an FR4 PCB. The operating and storage temperatures range from -65°C to 150°C, with a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBS3906,215 is -40V.
The PMBS3906,215 transistor has a maximum collector current (IC) of -100mA.
The DC current gain (hFE) of the PMBS3906,215 is between 100 and 300 under typical conditions (VCE = -1V, IC = -10mA, Tamb = 25°C).
The PMBS3906,215 transistor is supplied in a TO-236AB (SOT23) surface-mount package.
The PMBS3906,215 transistor is used for general-purpose switching and amplification.