BCX52-10,115
NXP Semiconductors
The NXP Semiconductors BCX52-10,115 is a PNP bipolar junction transistor. It features a 60V collector-emitter voltage and 1A collector current.
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144,000 pcs
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144000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PUMD10,115 is a pre-biased bipolar transistor array designed for various electronic applications. This component integrates both an NPN and a PNP transistor within a single package, simplifying circuit design and reducing board space.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The array offers a frequency response up to 230MHz and a power dissipation of 300mW. It is housed in a compact 6-TSSOP surface mount package.
This transistor array is suitable for applications requiring signal amplification or switching where space and component count are critical. Its pre-biased configuration simplifies external circuitry, making it easier to integrate into designs.
The PUMD10,115 is specified for a maximum operating temperature of 150°C, ensuring reliable performance in demanding environments. The surface mountable 6-TSSOP package is standard for many modern electronic assemblies.
| Qty | Low | High |
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| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the PUMD10,115 is 150°C.
The PUMD10,115 is available in a 6-TSSOP surface mount package.
The PUMD10,115 has a 50V collector-emitter voltage, 100mA collector current, and a 230MHz frequency.
The PUMD10,115 contains 2 elements: 1 NPN and 1 PNP transistor.
