PUMD10,115
NXP Semiconductors
The NXP Semiconductors PUMD10,115 is a pre-biased bipolar transistor array featuring 1 NPN and 1 PNP transistor. It operates at up to 50V and 100mA.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,974 pcs
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2974 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,974 pcs
|
2974 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The NXP Semiconductors PBSS8110Z,135 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor designed for high-voltage applications. It comes in a compact SOT223 (SC-73) surface-mounted plastic package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 1A. The transistor also offers a high collector current capability (ICM) of 3A for single pulses and a low collector-emitter saturation resistance (RCEsat) of typically 160mΩ at 1A/100mA.
This BISS transistor is suitable for various high-voltage applications such as DC-to-DC conversion, MOSFET gate driving, and motor control. Its design contributes to high efficiency by reducing heat generation and allows for a smaller required Printed-Circuit Board (PCB) area compared to conventional transistors.
The device is mounted on an FR4 PCB with a standard footprint, and its power dissipation capabilities vary based on the PCB mounting pad size, ranging from 0.65W to 1.4W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS8110Z,135 is 100V.
The continuous collector current (IC) rating is 1A.
This transistor is supplied in a SOT223 package.
This transistor is used in high-voltage DC-to-DC conversion, high-voltage MOSFET gate driving, high-voltage motor control, high-voltage power switches, and automotive applications.
