| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,475 pcs
|
1475 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Nexperia PSMN4R0-30YLD is a logic-level N-channel enhancement mode MOSFET utilizing NextPowerS3 Technology. It is designed for high efficiency applications, particularly at high switching frequencies, offering ultra low QG, QGD, and QOSS for improved system efficiency. This MOSFET provides superfast switching with soft-recovery characteristics and low spiking and ringing for reduced EMI.
Key electrical specifications include a drain-source voltage of 30V and a maximum continuous drain current of 95A at 25°C. The on-state resistance (RDSon) is as low as 4.0 mΩ at VGS = 10V and 25A, and 4.4 mΩ at VGS = 4.5V and 25A. The junction temperature can reach up to 175°C, with a total power dissipation of 64W at 25°C.
The PSMN4R0-30YLD is housed in an LFPAK56 package, also known as Power-SO8. This package is surface-mount compatible and features exposed leads for optimal visual solder inspection. It is suitable for applications such as on-board DC-to-DC solutions, secondary-side synchronous rectification, voltage regulator modules (VRM), and point-of-load (POL) modules for various system components.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The maximum continuous drain current is 95A.
The on-state resistance is 4.4 mΩ.
The on-state resistance is 4 mΩ.
The package is LFPAK56, also known as Power-SO8.
The maximum junction temperature is 175°C.