| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
| Thermal Resistance |
The BFQ67 is a silicon NPN wideband transistor manufactured by NXP Semiconductors, housed in a plastic SOT-23 package. It is engineered for high-frequency applications, boasting a transition frequency of 8 GHz and a maximum unilateral power gain of 14 dB at 1 GHz.
This transistor is suitable for RF portable communications equipment and satellite TV tuners operating up to 2 GHz. Key electrical characteristics include a low noise figure of 1.3 dB at 1 GHz and a DC current gain (hFE) ranging from 60 to 100.
The BFQ67 features gold metallization, ensuring excellent reliability. Its operating parameters include a collector-emitter voltage (VCEO) of up to 10 V and a collector current (IC) of up to 50 mA. The device is designed for surface mounting within the SOT-23 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFQ67 transistor is 8 GHz.
The maximum collector-emitter voltage (VCEO) for the BFQ67 is 10 V.
The noise figure (F) of the BFQ67 at 1 GHz is typically 1.3 dB.
The BFQ67 transistor is supplied in a SOT-23 package.