| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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138 pcs
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138 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PSMN011-60MS is a standard level enhancement mode N-channel MOSFET housed in an LFPAK33 package. This component is designed and qualified for a wide range of industrial, communications, and domestic equipment applications, including AC-to-DC converters, synchronous rectification, and DC-DC converters.
Key electrical specifications include a drain-source voltage of 60 V, a maximum continuous drain current of 61 A at 25°C (Tmb), and a low on-state resistance (RDSon) of 11.3 mΩ typical at 15 A and 25°C (VGS = 10 V). The MOSFET is qualified to 175 °C junction temperature, offering robust thermal performance.
The LFPAK33 package is footprint compatible with other 3.3mm types, facilitating integration into existing designs. Its design prioritizes high efficiency through reduced switching and conduction losses, making it suitable for standard level gate drive sources.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The maximum continuous drain current at 25°C and VGS=10V is 61 A.
The junction temperature range is -55°C to 175°C.
The component is housed in an LFPAK33 surface-mount package.
The typical drain-source on-state resistance is 9.6 mΩ, with a maximum of 11.3 mΩ at VGS=10V, ID=15A, and Tj=25°C.
The maximum total power dissipation is 91 W at Tmb=25°C.
The gate-source voltage range is ±20 V.