| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PMBTH10 from Philips is a general purpose NPN silicon transistor designed for switching applications. It operates at high frequencies, with a transition frequency (fT) of 650 MHz at 10V and 4mA.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 25V and a collector-base voltage (VCBO) of 30V. The DC current gain (hFE) is a minimum of 60 at 10V and 4mA. It features a low collector-emitter saturation voltage (VCE sat) of 0.5V maximum at 4mA collector current and 0.4mA base current.
Encapsulated in a SOT23 plastic envelope, the PMBTH10 is suitable for surface mount applications. Its pnp complement is the PMBTH81. The transistor has a total power dissipation of 400 mW at a soldering point temperature of 45°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PMBTH10 is 25V.
The transition frequency (fT) of the PMBTH10 is 650 MHz.
The PMBTH10 transistor is supplied in a SOT23 package.
The DC current gain (hFE) of the PMBTH10 is a minimum of 60.
The total power dissipation for the PMBTH10 is 400 mW at Ts = 45 °C.
