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BFR182W The Infineon BFR182W is a low-noise silicon bipolar RF transistor designed for broadband amplifiers. It offers high gain and low noise figure.
Mfr Part #:

BFR182W

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon BFR182W is a low-noise silicon bipolar RF transistor designed for broadband amplifiers. It offers high gain and low noise figure.
✓ Total Stock: 14,545 pcs
$ Price Range: $0.24

BFR182W Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
13,075 pcs
On Request
13075 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,470 pcs
On Request
1470 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFR182W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Halogen Free
Junction Temperature
Lead Style
Mounting Type
SVHC Present
Storage Temperature
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BFR182W Description

Short technical summary and product information.

The Infineon BFR182W is a low-noise silicon bipolar RF transistor suitable for high-gain broadband amplifiers operating at collector currents from 1 mA to 20 mA. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz.

 

This transistor is available in a Pb-free, halogen-free SOT-323 package with visible leads. Key electrical characteristics include a DC current gain (hFE) typically between 70 and 140, and various capacitance values such as collector-base capacitance (Ccb) of 0.34 pF and collector-emitter capacitance (Cce) of 0.26 pF.

 

The BFR182W is designed for applications requiring low noise and high gain in RF circuits. Its maximum ratings include a collector-emitter voltage (VCEO) of 12 V and a collector current (IC) of 35 mA. The device operates within a junction temperature range of -65 to 150 °C.

BFR182W Quick Information

Product Type: RF Transistor
Canonical Name: BFR182W Low Noise Silicon Bipolar RF Transistor
Subcategory: RF Transistor

BFR182W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: True

BFR182W Estimated Pricing

Qty Low High
1+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR182W Features

  • Low noise, high-gain RF transistor
  • 8 GHz transition frequency (fT)
  • 0.9 dB minimum noise figure
  • SOT-323 surface mount package
  • Pb-free and halogen-free

BFR182W Applications

  • Low-noise RF amplifier applications
  • Broadband amplifier circuits
  • Automotive RF modules
  • High-frequency signal amplification

BFR182W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transition frequency of the BFR182W transistor?

The transition frequency (fT) is typically 8 GHz at 15 mA collector current and 8 V collector-emitter voltage.

What is the minimum noise figure for the BFR182W?

The minimum noise figure (NFmin) is 0.9 dB at 3 mA collector current, 8 V collector-emitter voltage, and 900 MHz frequency.

What package type is the BFR182W available in?

The BFR182W is available in a SOT-323 package.

What is the maximum collector current for the BFR182W?

The maximum collector current (IC) is 35 mA.

What is the maximum power dissipation of the BFR182W?

The total power dissipation (Ptot) is 250 mW at or below 90 °C soldering point temperature.

What is the RoHS status of the BFR182W?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BFR182W?

The Moisture Sensitivity Level (MSL) is 1.

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