| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,795 pcs
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8795 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCR192 is a PNP Silicon Digital Transistor suitable for applications such as switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors with typical values of R1 = 22kΩ and R2 = 47kΩ.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The device offers a typical DC current gain (hFE) of 70 and a collector-emitter saturation voltage (VCEsat) of ≤ 0.3V at 10mA.
The BCR192 operates within a junction temperature range of -65°C to 150°C. It is qualified according to AEC-Q101 and comes in Pb-free (RoHS compliant) packaging.
Available in SOT23 and SOT323 surface mount packages, this digital transistor is designed for efficient integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 V.
The maximum collector current (IC) is 100 mA.
The BCR192 is available in SOT23 and SOT323 surface-mount packages.
The BCR192 has a maximum power dissipation of 200 mW in the SOT23 package and 250 mW in the SOT323 package.
The maximum junction temperature is 150 °C, and the storage temperature range is -65 °C to 150 °C.
The minimum DC current gain (hFE) is 70 at IC = 5 mA and VCE = 5 V.
The maximum collector-emitter saturation voltage is 0.3 V at IC = 10 mA and IB = 0.5 mA.
