| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Tape & Reel |
The Nexperia PHT6NQ10T is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is suitable for applications such as motor and relay drivers, and d.c. to d.c. converters.
Key electrical characteristics include a drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of up to 6.5A at 25°C (Tsp). The on-state resistance (RDS(ON)) is a maximum of 90 mΩ. The transistor also features fast switching and low thermal resistance.
This MOSFET is supplied in the SOT223 surface mounting package. It operates within a junction and storage temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 100V.
The continuous drain current is 6.5A at 25°C (Tsp).
The maximum on-state resistance is 90 mΩ.
The PHT6NQ10T is supplied in the SOT223 surface mounting package.
The operating and storage temperature range is -65°C to 150°C.
