PDTC114ET The PDTC114ET is an NPN Resistor-Equipped Transistor from NXP Semiconductors. It offers a 50V collector-emitter voltage and 100mA output current capability, simplifying circuit design with its built-in bias resistors.
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PDTC114ET

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The PDTC114ET is an NPN Resistor-Equipped Transistor from NXP Semiconductors. It offers a 50V collector-emitter voltage and 100mA output current capability, simplifying circuit design with its built-in bias resistors.
Total Stock: 462,242 pcs
$ Price Range: $0.54

PDTC114ET Available from 4 distributors

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453,000 pcs
453000 pcs On Request 1 On Request On Request 17+ On Request On Request
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4,500 pcs
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2,371 pcs
2371 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,371 pcs
2371 pcs On Request 1 On Request On Request On Request On Request On Request

PDTC114ET Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Ambient Temperature
Automotive Grade
Industrial Grade
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Lead Spacing
Medical Grade
Military Grade
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Storage Temperature
Tape & Reel
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PDTC114ET Description

Short technical summary and product information.

The PDTC114ET is an NPN Resistor-Equipped Transistor (RET) from NXP Semiconductors, housed in a compact SOT23 surface-mounted device (SMD) plastic package. This component is designed to simplify circuit design and reduce component count by integrating bias resistors.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and an output current (IO) capability of 100mA. It features a typical input bias resistor (R1) of 10 kΩ and a typical bias resistor ratio (R2/R1) of 1. The device is suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847 series in digital applications, controlling IC inputs, and switching loads.

 

The PDTC114ET has a total power dissipation of 250mW at 25°C ambient temperature, with a maximum junction temperature of 150°C and a storage temperature range of -65°C to 150°C. It is supplied in a SOT23 package with a 1.9mm pitch and body dimensions of 2.9mm x 1.3mm x 1mm.

PDTC114ET Quick Information

Product Type: Resistor-Equipped Transistor
Canonical Name: NPN Resistor-Equipped Transistor
Subcategory: NPN

PDTC114ET Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTC114ET Estimated Pricing

Qty Low High
1+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTC114ET Features

  • 50V collector-emitter voltage rating.
  • 100mA maximum output current capability.
  • Integrated bias resistors simplify design.
  • SOT23 surface-mount package.
  • Suitable for digital applications.

PDTC114ET Applications

  • Digital applications in automotive.
  • Digital applications in industrial.
  • Controlling integrated circuit inputs.
  • Switching electronic loads.

PDTC114ET FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the PDTC114ET?

The collector-emitter voltage (VCEO) for the PDTC114ET is 50V.

What is the maximum output current capability of the PDTC114ET?

The PDTC114ET has a maximum output current (IO) capability of 100mA.

What is the typical input bias resistor value (R1) for the PDTC114ET?

The typical input bias resistor (R1) for the PDTC114ET is 10 kΩ.

What package type is the PDTC114ET supplied in?

The PDTC114ET is supplied in a SOT23 surface-mount package.

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